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BS IEC 62047-31:2019

$102.76

Semiconductor devices. Micro-electromechanical devices – Four-point bending test method for interfacial adhesion energy of layered MEMS materials

Published By Publication Date Number of Pages
BSI 2019 16
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IEC 62047-31:2019 (E) specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are many layered material interfaces, and their adhesion energies are critical to the reliability of the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a test piece of layered MEMS device, and the interfacial adhesion energy is measured from the critical bending moment for the steady state cracking in the weakest interface. This test method applies to MEMS devices with thin film layers deposited on semiconductor substrates. The total thickness of the thin film layers should be 100 times less than the thickness of a supporting substrate (typically a silicon wafer piece).

PDF Catalog

PDF Pages PDF Title
2 undefined
4 CONTENTS
5 FOREWORD
7 1 Scope
2 Normative references
3 Terms, definitions, symbols and designations
3.1 Terms and definitions
8 3.2 Symbols and designations
4 Test piece
4.1 General
4.2 Shape of a test piece
Figure 1 – Four-point bending test piece
Table 1 – Symbols and designations of a test piece
9 4.3 Measurement of dimensions
4.4 Evaluation of energy release rate
5 Testing method and test apparatus
5.1 Test principle
10 5.2 Test machine
5.3 Test procedure
11 5.4 Test environment
6 Test report
Figure 2 – Picture of a four-point bending fixture
12 Annex A (informative)Failure modes during the four-point bending test
A.1 General
A.2 Some failure modes
13 Figure A.1 – Several failure modes during the four-point bending test
14 Bibliography
BS IEC 62047-31:2019
$102.76