ISO 17560:2002
$19.50
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
Published By | Publication Date | Number of Pages |
ISO | 2002-07 | 18 |
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ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.
Published Code | ISO |
---|---|
Published By | International Organization for Standardization |
Publication Date | 2002-07 |
Pages Count | 18 |
Language | English |
Edition | 1 |
File Size | 307.2 KB |
ICS Codes | 71.040.40 - Chemical analysis |
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